RJK6015DPK
RJK6015DPK is Silicon N-Channel MOSFET manufactured by Renesas.
Features
- Low on-resistance
- Low leakage current
- High speed switching
Outline
RENESAS Package code: PRSS0004ZE-A (Package name:TO-3P)
1. Gate 2. Drain (Flange) 3. Source
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 IAPNote3 EARNote3 Pch Note2 θch-c Tch Tstg Ratings 600 ±30 21 63 21 63 6 1.9 150 0.833 150
- 55 to +150 Unit V V A A A A A m J W °C/W °C °C
REJ03G1536-0200 Rev.2.00 Apr 18, 2007 Page 1 of 6
Electrical Characteristics
(Ta = 25°C)
Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF trr Min 600
- - 3.0
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- Typ
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- - 0.315 2600 240 28 40 45 107 40 67 13 29 0.89 430 Max
- 1 ±0.1 4.5 0.360
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