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RJK6015DPM - MOS FET

General Description

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Key Features

  • Low on-resistance RDS(on) = 0.315  typ. (at ID = 10.5 A, VGS = 10 V, Ta = 25 C).
  • Low leakage current.
  • High speed switching R07DS0438EJ0200 (Previous: REJ03G1752-0100) Rev.2.00 Jun 21, 2012 Outline.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary Datasheet RJK6015DPM 600V - 21A - MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 0.315  typ. (at ID = 10.5 A, VGS = 10 V, Ta = 25 C)  Low leakage current  High speed switching R07DS0438EJ0200 (Previous: REJ03G1752-0100) Rev.2.00 Jun 21, 2012 Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) D G 1. Gate 2. Drain 3. Source S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. 2. 3. 4.