Datasheet4U Logo Datasheet4U.com

RJK6011DJA - High Speed Power Switching MOS FET

General Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment.

Key Features

  • Low on-resistance RDS(on) = 35 Ω typ. (at ID = 0.05 A, VGS = 10 V, Ta = 25°C).
  • Low drive current.
  • High density mounting Outline.

📥 Download Datasheet

Datasheet Details

Part number RJK6011DJA
Manufacturer Renesas
File Size 131.50 KB
Description High Speed Power Switching MOS FET
Datasheet download datasheet RJK6011DJA Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
RJK6013DPE Silicon N-Channel MOSFET Renesas Technology
RJK6014DPK Silicon N-Channel MOSFET Renesas Technology
RJK6014DPK N-Channel MOSFET INCHANGE
RJK6014DPP Silicon N-Channel MOSFET Renesas Technology
RJK6015DPK Silicon N-Channel MOSFET Renesas Technology

Other Datasheets by Renesas

Part Number Description
RJK6011DJE N-Channel Power MOSFET
RJK6012DPE N-Channel Power MOSFET
RJK6012DPP N-Channel Power MOSFET
RJK6012DPP-A0 High Speed Power Switching MOSFET
RJK6013DPP N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
RJK6011DJA 600V - 0.1A - MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 35 Ω typ. (at ID = 0.05 A, VGS = 10 V, Ta = 25°C) • Low drive current • High density mounting Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92(1)) G 321 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Channel dissipation Channel to ambient thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% Symbol VDSS VGSS ID ID Note1 (pulse) IDR IDR Note1 (pulse) Pch θch-a Tch Tstg Preliminary Datasheet R07DS0873EJ0200 Rev.2.00 Jan 28, 2014 D 1. Source 2. Drain 3. Gate S Ratings 600 ±30 0.