RJK6024DPD Key Features
- Low on-resistance RDS(on) = 28 typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25C)
- Low drive current
- High density mounting REJ03G1936-0100 Rev.1.00 Jun 01, 2010
- Part: RJK6024DPD
- Description: Silicon N Channel MOS FET High Speed Power Switching
- Manufacturer: Renesas
- Size: 101.10 KB
Other RJK6024DPD Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Renesas |
RJK6024DPE | N-Channel Power MOSFET |