RJK6024DPE Key Features
- Low on-resistance RDS(on) = 28 typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25C)
- Low leakage current
- High speed switching R07DS0424EJ0200 Rev.2.00 Feb 27, 2012
| Manufacturer | Part Number | Description |
|---|---|---|
Renesas |
RJK6024DP3-A0 | High Speed Power Switching MOS FET |
Renesas |
RJK6024DPD | Silicon N Channel MOS FET High Speed Power Switching |