RJK6024DP3-A0 Overview
RJK6024DP3-A0 600 V - 0.4 A - MOS FET High Speed Power Switching.
RJK6024DP3-A0 Key Features
- Low on-resistance RDS(on) = 28 Ω typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25°C)
- Low leakage current
- High speed switching
RJK6024DP3-A0 Details
| Part number | RJK6024DP3-A0 |
|---|---|
| Datasheet | RJK6024DP3-A0-RenesasTechnology.pdf |
| File Size | 143.04 KB |
| Manufacturer | Renesas |
| Description | High Speed Power Switching MOS FET |
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