RJK6024DP3-A0 Overview
RJK6024DP3-A0 600 V - 0.4 A - MOS FET High Speed Power Switching.
RJK6024DP3-A0 Key Features
- Low on-resistance RDS(on) = 28 Ω typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25°C)
- Low leakage current
- High speed switching
| Part number | RJK6024DP3-A0 |
|---|---|
| Datasheet | RJK6024DP3-A0-RenesasTechnology.pdf |
| File Size | 143.04 KB |
| Manufacturer | Renesas |
| Description | High Speed Power Switching MOS FET |
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RJK6024DP3-A0 600 V - 0.4 A - MOS FET High Speed Power Switching.
| Part Number | Description |
|---|---|
| RJK6024DPD | Silicon N Channel MOS FET High Speed Power Switching |
| RJK6020DPK | Silicon N Channel MOSFET High Speed Power Switching |
| RJK6022DJE | Silicon N Channel MOSFET High Speed Power Switching |
| RJK6025DPE | Silicon N Channel MOS FET High Speed Power Switching |
| RJK6026DPP | Silicon N Channel MOSFET High Speed Power Switching |
| RJK6029DJA | Silicon N Channel MOS FET High Speed Power Switching |
| RJK6002DPD | Silicon N Channel MOS FET High Speed Power Switching |
| RJK6006DPD | Silicon N Channel MOS FET High Speed Power Switching |
| RJK6009DPP | Silicon N Channel MOS FET High Speed Power Switching |
| RJK6013DPE | Silicon N-Channel MOSFET |