RJK6024DP3-A0 Key Features
- Low on-resistance RDS(on) = 28 Ω typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25°C)
- Low leakage current
- High speed switching
- Part: RJK6024DP3-A0
- Description: High Speed Power Switching MOS FET
- Manufacturer: Renesas
- Size: 143.04 KB
Related Renesas Datasheets
| Part Number | Description |
|---|---|
| RJK6024DPD | Silicon N Channel MOS FET High Speed Power Switching |
| RJK6020DPK | Silicon N Channel MOSFET High Speed Power Switching |
| RJK6022DJE | Silicon N Channel MOSFET High Speed Power Switching |
| RJK6025DPE | Silicon N Channel MOS FET High Speed Power Switching |
| RJK6026DPP | Silicon N Channel MOSFET High Speed Power Switching |