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RJK6022DJE - Silicon N Channel MOSFET High Speed Power Switching

Features

  • Low on-resistance.
  • Low drive current.
  • High density mounting Outline.

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RJK6022DJE Silicon N Channel MOS FET High Speed Power Switching REJ03G1484-0600 Rev.6.00 Nov 10, 2006 Features • Low on-resistance • Low drive current • High density mounting Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) D G 1. Source 2. Drain 3. Gate 32 S 1 Absolute Maximum Ratings (Ta = 25°C) www.DataSheet4U.com Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Channel dissipation Channel to ambient thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 Pch θch-a Tch Tstg Ratings 600 ±30 0.2 0.8 0.2 0.8 0.
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