RJK6025DPE Key Features
- Low on-resistance RDS(on) = 13 Ω typ. (at ID =0.4 A, VGS = 10 V, Ta = 25°C)
- Low leakage current
- High speed switching REJ03G1870-0100 Rev.1.00 Dec 08, 2009
- Part: RJK6025DPE
- Description: Silicon N Channel MOS FET High Speed Power Switching
- Manufacturer: Renesas
- Size: 100.93 KB
Other RJK6025DPE Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Renesas |
RJK6025DPD | N-Channel Power MOSFET |
|
Renesas |
RJK6025DPH-E0 | MOS FET |