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RJK6025DPE - Silicon N Channel MOS FET High Speed Power Switching

Features

  • Low on-resistance RDS(on) = 13 Ω typ. (at ID =0.4 A, VGS = 10 V, Ta = 25°C).
  • Low leakage current.
  • High speed switching REJ03G1870-0100 Rev.1.00 Dec 08, 2009 Outline.

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www.DataSheet4U.com RJK6025DPE Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 13 Ω typ. (at ID =0.4 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching REJ03G1870-0100 Rev.1.00 Dec 08, 2009 Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) D 4 1. Gate 2. Drain 3. Source 4. Drain 1 G 2 3 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2.
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