RJK6025DPD Key Features
- Low on-resistance RDS(on) = 13.5 typ. (at ID = 0.5 A, VGS = 10 V, Ta = 25C)
- Low drive current
- High density mounting R07DS0676EJ0100 Rev.1.00 Feb 17, 2012
- Part: RJK6025DPD
- Description: N-Channel Power MOSFET
- Manufacturer: Renesas
- Size: 135.74 KB
Other RJK6025DPD Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Renesas |
RJK6025DPE | Silicon N Channel MOS FET High Speed Power Switching |