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RJP6085DPK Datasheet

Silicon N Channel IGBT High Speed Power Switching

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RJP6085DPK
Silicon N Channel IGBT
High Speed Power Switching
Features
High speed switching
Low collector to emitter saturation voltage
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
4
1
2
3
G
C
E
www.DataSheet4U.com
REJ03G1862-0100
Rev.1.00
Nov 09, 2009
1. Gate
2. Collecotor
3. Emitter
4. Collector (Flange)
Absolute Maximum Ratings
Item
Collector to Emitter voltage
Gate to Emitter voltage
Collector current
Collector peak current
Collector dissipation
Junction to case thermal impedance
Junction temperature
Storage temperature
Notes: 1. Pulse width limited by safe operating area.
2. Value at Tc = 25°C
Symbol
VCES
VGES
IC
IC(peak) Note1
PC Note2
θj-c Note2
Tj
Tstg
Ratings
600
±30
40
80
178.5
0.7
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
W
°C/W
°C
°C
REJ03G1862-0100 Rev.1.00 Nov 09, 2009
Page 1 of 5


Renesas Electronics Components Datasheet

RJP6085DPK Datasheet

Silicon N Channel IGBT High Speed Power Switching

No Preview Available !

RJP6085DPK
Electrical Characteristics
Item
Zero gate voltage collector current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
Output capacitance
Reveres transfer capacitance
Switching time
Notes: 3. Pulse test
Symbol
ICES
IGES
VGE(off)
VCE(sat)
Cies
Coes
Cres
td(on)
tr
td(off)
tf
Min
4
Typ
2.65
1150
105
12
30
60
60
40
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Max
10
±1
6
3.5
Unit
μA
μA
V
V
pF
pF
pF
ns
ns
ns
ns
(Ta = 25°C)
Test Conditions
VCE = 600V, VGE = 0 V
VGE = ±30 V, VCE = 0 V
VCE = 10V, IC = 1 mA
IC = 40 A, VGE = 15V Note3
VCE = 25V
VGE = 0 V
f = 1MHz
IC = 40 A, Resistive Load
VCC = 300V
VGE = 15V
Rg = 5 Ω
REJ03G1862-0100 Rev.1.00 Nov 09, 2009
Page 2 of 5


Part Number RJP6085DPK
Description Silicon N Channel IGBT High Speed Power Switching
Maker Renesas Technology
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