RJP6085DPK
RJP6085DPK is Silicon N-Channel IGBT manufactured by Renesas.
Features
- High speed switching
- Low collector to emitter saturation voltage REJ03G1862-0100 Rev.1.00 Nov 09, 2009
Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
4 C
1. Gate 2. Collecotor 3. Emitter 4. Collector (Flange)
Absolute Maximum Ratings
(Ta = 25°C)
Item Collector to Emitter voltage Gate to Emitter voltage Collector current Collector peak current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature Notes: 1. Pulse width limited by safe operating area. 2. Value at Tc = 25°C Symbol VCES VGES IC IC(peak) Note1 PC Note2 θj-c Note2 Tj Tstg Ratings 600 ±30 40 80 178.5 0.7 150
- 55 to +150 Unit V V A A W °C/W °C °C
REJ03G1862-0100 Rev.1.00 Nov 09, 2009 Page 1 of 5
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Electrical Characteristics
(Ta = 25°C)
Item Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reveres transfer capacitance Switching time Symbol ICES IGES VGE(off) VCE(sat) Cies Coes Cres td(on) tr td(off) tf Min
- - 4
- -
- -
- -
- - Typ
- -
- 2.65 1150 105 12 30 60 60 40 Max 10 ±1 6 3.5
- -
- -
- -
- Unit μA μA V V p F p F p F ns ns ns ns Test Conditions VCE = 600V, VGE = 0 V VGE = ±30 V, VCE = 0 V VCE = 10V, IC = 1 m A IC = 40 A, VGE = 15V Note3 VCE = 25V VGE = 0 V f = 1MHz IC = 40 A, Resistive Load VCC = 300V VGE = 15V Rg = 5 Ω
Notes: 3. Pulse test
REJ03G1862-0100 Rev.1.00 Nov 09, 2009 Page 2 of 5
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Main Characteristics
Maximum Safe Operation Area
1000 50
Typical Output Characteristics (1)
Pulse Test Ta = 25°C
9V 10 V 15 V 8.4 V 8.2 V 8V
Collector Current IC (A)
Collector Current IC...