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Renesas Electronics Components Datasheet

RQA0005QXDQS Datasheet

Silicon N-Channel MOS FET

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RQA0005QXDQS
Silicon N-Channel MOS FET
Features
High Output Power, High Gain, High Efficiency
Pout = +33 dBm, Linear Gain = 21 dB, PAE = 68% (f = 520 MHz)
Compact package capable of surface mounting
Outline
RENESAS Package code: PLZZ0004CA-A
(Package Name : UPAK R   )
3
21
3
4
1
REJ03G1325-0100
Rev.1.00
Oct 16, 2006
1. Gate
2. Source
3. Drain
4. Source
Note: Marking is “QX”.
2, 4
*UPAK is a trademark of Renesas Technology Corp.
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Channel dissipation
Channel temperature
Storage temperature
Note1: Value at Tc = 25°C
Symbol
VDSS
VGSS
ID
Pchnote1
Tch
Tstg
Ratings
16
±5
0.8
9
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
W
°C
°C
This Device is sensitive to Electro Static Discharge. An Adequate careful handling procedure is requested.
Rev.1.00 Oct 16, 2006 page 1 of 12


Renesas Electronics Components Datasheet

RQA0005QXDQS Datasheet

Silicon N-Channel MOS FET

No Preview Available !

RQA0005QXDQS
www.DaEtalSehceettr4iUc.caolmCharacteristics
Item
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Forward Transfer Admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Output Power
Power Added Efficiency
Symbol
IDSS
IGSS
VGS(off)
|yfs|
Ciss
Coss
Crss
Pout
PAE
Min.
0.15
0.6
32
1.58
55
Typ
0.45
1.1
22
12
2.6
33
2
68
Max.
10
±2
0.75
1.6
Unit
µA
µA
V
S
pF
pF
pF
dBm
W
%
(Ta = 25°C)
Test Conditions
VDS = 16 V, VGS = 0
VGS = ±5 V, VDS = 0
VDS = 6 V, ID = 1 mA
VDS = 6 V, ID = 600 mA
VGS = 5 V, VDS = 0, f = 1 MHz
VDS = 6 V, VGS = 0, f = 1 MHz
VDG = 6 V, VGS = 0, f = 1 MHz
VDS = 6 V, IDQ = 200 mA
f = 520 MHz
Pin = +20 dBm(100mW)
Main Characteristics
Maximum Channel Power
Dissipation Curve
10
8
6
4
Typical Output Characteristics
1.0 2.0 V
Pulse Test
1.75 V
0.8
0.6 1.5 V
0.4 1.25 V
2 0.2 VGS = 1.0 V
0
0 50 100 150 200
Case Temperature TC (°C)
0.0
0 2 4 6 8 10
Drain to Source Voltage VDS (V)
Typical Transfer Characterisitics
1.2
VDS = 6 V
1.0 Pulse Test
0.8
|yfs| ID
0.6
0.4
0.2
0.0
0
0.4 0.8 1.2 1.6 2.0
Gate to Source Voltage VGS (V)
Forward Transfer Admittance
vs. Drain Current
10.0
VDS = 6 V
Pulse Test
1.0
0.1
0.1
1.0
Drain Current ID (A)
10.0
Rev.1.00 Oct 16, 2006 page 2 of 12


Part Number RQA0005QXDQS
Description Silicon N-Channel MOS FET
Maker Renesas Technology
Total Page 13 Pages
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