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RQA0004LXAQS
Silicon N-Channel MOS FET
REJ03G1567-0100 Rev.1.00 Jul 04, 2007
Features
• High Output Power, High Gain, High Efficiency Pout = +29 dBm, Linear Gain = 21 dB, PAE = 68% (f = 520 MHz) • Compact package capable of surface mounting
Outline
RENESAS Package code: PLZZ0004CA-A (Package Name : UPAK R )
3
3
2
1 1 4
1. Gate 2. Source 3. Drain 4. Source
2, 4
Note:
Marking is “LX”. *UPAK is a trademark of Renesas Technology Corp.
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Channel dissipation Channel temperature Storage temperature Note: Value at Tc = 25°C Symbol VDSS VGSS ID Pchnote Tch Tstg Ratings 16 ±5 0.3 3 150 –50 to +150 Unit V V A W °C °C
This device is sensitive to electro static discharge.
RQA0004LXAQS Datasheet
