RQA0004LXAQS Description
RQA0004LXAQS Silicon N-Channel MOS FET REJ03G1567-0100 Rev.1.00 Jul 04, 2007.
RQA0004LXAQS Key Features
- High Output Power, High Gain, High Efficiency Pout = +29 dBm, Linear Gain = 21 dB, PAE = 68% (f = 520 MHz)
- pact package capable of surface mounting