RQA0004PXDQS Overview
RQA0004PXDQS Silicon N-Channel MOS FET REJ03G1489-0100 Rev.1.00 Dec 12, 2006.
RQA0004PXDQS Key Features
- High Output Power, High Efficiency Pout = +29 dBm, PAE = 68% (f = 520 MHz)
- pact package capable of surface mounting
| Part number | RQA0004PXDQS |
|---|---|
| Datasheet | RQA0004PXDQS_RenesasTechnology.pdf |
| File Size | 201.87 KB |
| Manufacturer | Renesas |
| Description | Silicon N-Channel MOS FET |
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RQA0004PXDQS Silicon N-Channel MOS FET REJ03G1489-0100 Rev.1.00 Dec 12, 2006.
| Part Number | Description |
|---|---|
| RQA0004LXAQS | Silicon N-Channel MOS FET |
| RQA0001DNS | Silicon N-Channel MOS FET |
| RQA0002DNS | Silicon N-Channel MOS FET |
| RQA0003DNS | Silicon N-Channel MOS FET |
| RQA0005MXAQS | Silicon N-Channel MOS FET |
| RQA0005QXDQS | Silicon N-Channel MOS FET |
| RQA0008NXAQS | Silicon N-Channel MOS FET |
| RQA0008RXDQS | Silicon N-Channel MOS FET |
| RQA0009SXAQS | Silicon N-Channel MOS FET |
| RQA0009TXDQS | Silicon N-Channel MOS FET |