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RQK0606KGDQA - Silicon N Channel MOS FET Power Switching

Product Overview

Renesas Technology

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RQK0606KGDQA Silicon N Channel MOS FET Power Switching by Renesas Technology - Datasheet Preview — Datasheet preview – RQK0606KGDQA

Datasheet Details

Part number	RQK0606KGDQA
Manufacturer	Renesas Technology
File Size	120.47 KB
Description	Silicon N Channel MOS FET Power Switching
Datasheet	RQK0606KGDQA Datasheet
Additional preview pages of the RQK0606KGDQA datasheet.

Product details

Features

Low on-resistance RDS(on) = 173 mΩ typ. (at VGS = 4.5 V, ID = 0.8 A).
Low drive current.
High speed switching.
VDSS ≥ 60 V and capable of 2.5 V gate drive Outline.

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Published: Sep 13, 2007 |