RQK0606KGDQA Description
RQK0606KGDQA Silicon N Channel MOS FET Power Switching REJ03G1497-0100 Rev.1.00 Jan 15, 2007.
RQK0606KGDQA Key Features
- Low on-resistance RDS(on) = 173 mΩ typ.(at VGS = 4.5 V, ID = 0.8 A)
- Low drive current
- High speed switching
- VDSS ≥ 60 V and capable of 2.5 V gate drive