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Rohm Semiconductor Electronic Components Datasheet

1SS400SMFH Datasheet

Switching Diode

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1SS400SMFH pdf
Switching Diode
1SS400SMFH
lApplication
High frequency switching
lDimensions (Unit : mm)
0.8±0.05
0.12±0.05
Datasheet
AEC-Q101 Qualified
 lLand size figure (Unit : mm)
0.8
lFeatures
1) Ultra small mold type. (EMD2)
2) High reliability
EMD2
 lStructure
lConstruction
Silicon epitaxial
0.3±0.05
ROHM : EMD2
JEDEC : SOD-523
JEITA : SC-79
0.6±0.1
dot (year week factory)
lTaping specifications (Unit : mm)
cathode
anode
lAbsolute maximum ratings (Ta= 25°C)
Parameter
Symbol
Reverse voltage (repetitive)
Reverse voltage (DC)
Forward voltage(repetitive peak)
VRM
VR
IFM
Average rectified forward current
Io
Surge current(t=1s)
Isurge
Junction temperature
Tj
Storage temperature
Tstg
Limits
90
80
225
100
500
150
-55 to +150
Unit
V
V
mA
mA
mA
°C
°C
lElectrical characteristics (Ta = 25°C)
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
Symbol Min. Typ. Max. Unit
Conditions
VF - - 1.2 V IF=100mA
IR - - 0.1 mA VR=80V
Ct - - 3 pF VR=0.5V, f=1MHz
trr - - 4 ns VR=6V, IF=10mA,RL=100W
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
1/5
2013.02 - Rev.B


Rohm Semiconductor Electronic Components Datasheet

1SS400SMFH Datasheet

Switching Diode

No Preview Available !

1SS400SMFH pdf
1SS400SMFH
lElectrical characteristic curves
Data Sheet
100
Ta = 75°C
10
Ta = 125°C
1
Ta = 25°C
Ta = -25°C
0.1
0.01
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
FORWARD VOLTAGE : VF(V)
VF-IF CHARACTERISTICS
10000
1000
Ta = 125°C
100
Ta = 75°C
10
Ta = 25°C
1
0.1
0
Ta = -25°C
10 20 30 40 50 60 70 80
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
10 910
f = 1MHz
Ta=25°C
IF=100mA
900 n=30pcs
890 AVE : 879.0mV
1
880
870
0.1
0
860
5 10 15
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
VF DISPERSION MAP
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
2/5
2013.02 - Rev.B


Part Number 1SS400SMFH
Description Switching Diode
Maker Rohm
Total Page 8 Pages
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1SS400SMFH pdf
1SS400SMFH Datasheet PDF
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