Datasheet4U Logo Datasheet4U.com

2SAR514R - Midium Power Transistors

Key Features

  • s 1) Low saturation voltage, typically VCE (sat) = -0.4V (Max. ) (IC / IB= -300mA / -15mA) 2) High speed switching.
  • Structure PNP Silicon epitaxial planar transistor.

📥 Download Datasheet

Datasheet Details

Part number 2SAR514R
Manufacturer ROHM
File Size 375.68 KB
Description Midium Power Transistors
Datasheet download datasheet 2SAR514R Datasheet

More Datasheets from ROHM

Part Number Description
2SAR514P Midium Power Transistors
2SAR514P5 Middle Power Transistors
2SAR514PFRA Middle Power Transistor
2SAR512P Midium Power Transistors
2SAR512P5 Middle Power Transistors
2SAR512R Middle Power Transistors
2SAR513P Midium Power Transistors
2SAR513P5 Middle Power Transistors
2SAR513R Middle Power Transistors
2SAR502E3HZG PNP Transistors

Full PDF Text Transcription for 2SAR514R (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 2SAR514R. For precise diagrams, tables, and layout, please refer to the original PDF.

View original datasheet text
Midium Power Transistors (-80V / -0.7A) 2SAR514R  Features 1) Low saturation voltage, typically VCE (sat) = -0.4V (Max.) (IC / IB= -300mA / -15mA) 2) High speed switching  Structure PNP Silicon epitaxial planar transistor  Applications Driver  Dimensions (Unit : mm) TSMT3 (3) (1) (1) Base (2) Emitter (3) Collector (2) Abbreviated symbol : MD  Packaging specifications Package Type Code TSMT3 TL Basic ordering unit (pieces) 3000  Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulsed Power dissipation Junction temperature Range of storage temperature VCBO VCEO VEBO IC ICP *1 PD *2 PD *3 Tj Tstg -80 -80 -6 -0.7 -1.4 0.5 1.