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2SD2705S - Transistors

Download the 2SD2705S datasheet PDF (2SD2704K included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for transistors.

Features

  • 1) High DC current gain. hFE = 820 to 2700 2) High emitter-base voltage. VEBO = 25V (Min. ) 3) Low Ron Ron= 0.7Ω (Typ. ) zExternal dimensions (Unit : mm) 2SD2704K 2.9±0.2 1.9±0.2 0.95 0.95 (1) (2) 0.2 1.1+.
  • 0.1 0.8±0.1 (3) +0.1 0.15.
  • 0.1 0.06 0.4 +.
  • 0.05 All terminals have same dimensions 0.2 1.6+.
  • 0.1 2.8±0.2 0 to 0.1 0.3 to 0.6 zStructure Epitaxial planar type NPN silicon transistor ROHM : SMT3 EIAJ : SC-59 Abbreviated symbol: XL (1) Emitter (2) Base (3).

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Note: The manufacturer provides a single datasheet file (2SD2704K_Rohm.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2SD2705S
Manufacturer ROHM
File Size 110.14 KB
Description Transistors
Datasheet download datasheet 2SD2705S Datasheet
Other Datasheets by Rohm

Full PDF Text Transcription

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2SD2704K / 2SD2705S Transistors For Muting (20V, 0.3A) 2SD2704K / 2SD2705S zFeatures 1) High DC current gain. hFE = 820 to 2700 2) High emitter-base voltage. VEBO = 25V (Min.) 3) Low Ron Ron= 0.7Ω (Typ.) zExternal dimensions (Unit : mm) 2SD2704K 2.9±0.2 1.9±0.2 0.95 0.95 (1) (2) 0.2 1.1+ −0.1 0.8±0.1 (3) +0.1 0.15 − 0.1 0.06 0.4 + −0.05 All terminals have same dimensions 0.2 1.6+ −0.1 2.8±0.2 0 to 0.1 0.3 to 0.6 zStructure Epitaxial planar type NPN silicon transistor ROHM : SMT3 EIAJ : SC-59 Abbreviated symbol: XL (1) Emitter (2) Base (3) Collector 2SD2705S 4±0.2 2±0.2 3±0.2 (15Min.) 0.15 0.45+ −0.05 3Min. www.DataSheet4U.com 0.4 2.5 + −0.1 5 0.5 0.15 0.45 + −0.
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