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Rohm Semiconductor Electronic Components Datasheet

BR24S32-W Datasheet

Standard EEPROM

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Datasheet
Serial EEPROM series Standard EEPROM
I2C BUS EEPROM (2-Wire)
BR24Sxxx-W
(8K 16K 32K 64K 128K 256K)
General Description
BR24Sxxx-W is a serial EEPROM of I2C BUS interface method
Features
„ Completely conforming to the world standard I2C
BUS.
All controls available by 2 ports of serial clock
(SCL) and serial data (SDA)
„ Other devices than EEPROM can be connected to
the same port, saving microcontroller port
„ 1.7V to 5.5V single power source action most suitable
for battery use
„ FAST MODE 400kHz at 1.7V to 5.5V
„ Page write mode useful for initial value write at
factory shipment
„ Highly reliable connection by Au pad and Au wire
„ Auto erase and auto end function at data rewrite
„ Low current consumption
¾ At write operation (5V)
: 0.5mA (Typ.)
¾ At read operation (5V)
: 0.2mA (Typ.)
¾ At standby operation (5V) : 0.1μA (Typ.)
„ Write mistake prevention function
¾ Write (write protect) function added
¾ Write mistake prevention function at low voltage
„ Data rewrite up to 1,000,000 times
„ Data kept for 40 years
„ Noise filter built in SCL / SDA terminal
„ Shipment data all address FFh
Packages W(Typ.) x D(Typ.) x H(Max.)
SOP8
5.00mm x 6.20mm x 1.71mm
TSSOP-B8
3.00mm x 6.40mm x 1.20mm
SOP- J8
4.90mm x 6.00mm x 1.65mm
TSSOP-B8J
3.00mm x 4.90mm x 1.10mm
SSOP-B8
3.00mm x 6.40mm x 1.35mm
MSOP8
2.90mm x 4.00mm x 0.90mm
VSON008X2030
2.00mm x 3.00mm x 0.60mm
Page write
Number of pages
Product number
16Byte
BR24S08-W
BR24S16-W
32Byte
BR24S32-W
BR24S64-W
64Byte
BR24S128-W
BR24S256-W
BR24Sxxx-W
Capacity
Bit
format
Type
Power source
voltage
8Kbit 1K×8 BR24S08-W 1.7V to 5.5V
16Kbit 2K×8 BR24S16-W 1.7V to 5.5V
32Kbit 4K×8 BR24S32-W 1.7V to 5.5V
64Kbit 8K×8 BR24S64-W 1.7V to 5.5V
128Kbit 16K×8 BR24S128-W 1.7V to 5.5V
256Kbit 32K×8 BR24S256-W 1.7V to 5.5V
SOP8
SOP-J8
SSOP-B8 TSSOP-B8
●●
●●
●●
●●
●●
MSOP8
TSSOP-B8J
VSON008
X2030
●●●
●●●
●●●
●●
Product structureSilicon monolithic integrated circuit
www.rohm.com
©2012 ROHM Co., Ltd. All rights reserved.
TSZ2211114001
This product is not designed protection against radioactive rays
1/33
TSZ02201-0R2R0G100320-1-2
20.AUG.2012 Rev.001


Rohm Semiconductor Electronic Components Datasheet

BR24S32-W Datasheet

Standard EEPROM

No Preview Available !

BR24Sxxx-W (8K 16K 32K 64K 128K 256K)
Datasheet
Absolute Maximum Ratings (Ta=25)
Parameter
Symbol
Ratings
Supply Voltage
VCC -0.3 to +6.5
450 (SOP8)
450 (SOP-J8)
300 (SSOP-B8)
Power Dissipation Pd 330 (TSSOP-B8)
310 (TSSOP-B8J)
310 (MSOP8)
300 (VSON008X2030)
Storage Temperature
Tstg
65 to +125
Operating Temperature Topr
40 to +85
Terminal Voltage
-0.3 to Vcc+1.0
Unit
V
mW
V
Remarks
When using at Ta=25or higher 4.5mW to be reduced per 1.
When using at Ta=25or higher 4.5mW to be reduced per 1.
When using at Ta=25or higher 3.0mW to be reduced per 1.
When using at Ta=25or higher 3.3mW to be reduced per 1.
When using at Ta=25or higher 3.1mW to be reduced per 1.
When using at Ta=25or higher 3.1mW to be reduced per 1.
When using at Ta=25or higher 3.0mW to be reduced per 1.
Memory cell characteristics (Ta=25, Vcc=1.7V to 5.5V)
Parameter
Number of data rewrite times *1
Data hold years *1
Min.
1,000,000
40
Limits
Typ.
-
-
*1 Not 100% TESTED
Recommended Operating Ratings
Parameter
Symbol
Power source voltage
Vcc
Input voltage
VIN
Ratings
1.7 to 5.5
0 to Vcc
Max.
-
-
Unit
Times
Years
Unit
V
Electrical Characteristics
(Unless otherwise specified, Ta=-40to +85, VCC=1.7V to 5.5V)
Parameter
Symbol
Min
Limits
Typ. Max.
Unit
"H" Input Voltage1
VIH1 0.7Vcc - Vcc+1.0 V
Condition
"L" Input Voltage1
VIL1 -0.3
- 0.3Vcc V
"L" Output Voltage1
VOL1
-
-
0.4 V IOL=3.0mA , 2.5VVcc5.5V (SDA)
"L" Output Voltage2
VOL2
-
-
0.2 V IOL=0.7mA , 1.7VVcc2.5V (SDA)
Input Leakage Current ILI -1 -
1 μA VIN=0 to Vcc
Output Leakage Current ILO
-1
-
1 μA VOUT=0 to Vcc (SDA)
- - 2.0
Vcc=5.5V , fSCL =400kHz, tWR=5ms
Byte Write, Page Write BR24S08/16/32/64-W
ICC1
mA
Current consumption
at action
- - 2.5
Vcc=5.5V , fSCL =400kHz, tWR=5ms
Byte Write, Page Write BR24S128/256-W
ICC2
-
-
0.5
mA
Vcc=5.5V , fSCL =400kHz
Random read, Current read, Sequential read
Standby Current
ISB -
-
2.0
μA
Vcc=5.5V , SDASCL=Vcc
A0, A1, A2=GND, WP=GND
www.rohm.com
©2012 ROHM Co., Ltd. All rights reserved.
TSZ2211115001
2/33
TSZ02201-0R2R0G100320-1-2
20.AUG.2012 Rev.001


Part Number BR24S32-W
Description Standard EEPROM
Maker Rohm
Total Page 30 Pages
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