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Rohm Semiconductor Electronic Components Datasheet

DTB123Y Datasheet

Digital transistor

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DTB123Y pdf
DTB123Y series
PNP -500mA -50V Digital Transistors (Bias Resistor Built-in Transistors)
Datasheet
Parameter
VCC
IC(MAX.)
R1
R2
Value
-50V
-500mA
2.2kW
10kW
lFeatures
1) Built-In Biasing Resistors
2) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit).
3) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
completely eliminating parasitic effects.
4) Only the on/off conditions need to be set for
operation, making the circuit design easy.
5) Complementary NPN Types :DTD123Y series
6) Lead Free/RoHS Compliant.
lApplication
Switching circuit, Inverter circuit, Interface circuit,
Driver circuit
lOutline
UMT3
OUT
IN
GND
DTC123YU
SOT-323 (SC-70)
SMT3
OUT
IN
GND
DTB123YK
SOT-346 (SC-59)
lInner circuit
lPackaging specifications
Part No.
Package
DTB123YU
DTB123YK
UMT3
SMT3
Package
size
(mm)
2021
2928
Taping
code
T106
T146
Reel size
(mm)
Tape width
(mm)
Basic
ordering
unit (pcs)
180 8 3,000
180 8 3,000
Marking
F52
F52
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
1/6
2012.07 - Rev.F


Rohm Semiconductor Electronic Components Datasheet

DTB123Y Datasheet

Digital transistor

No Preview Available !

DTB123Y pdf
DTB123Y
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Supply voltage
Input voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Symbol
VCC
VIN
IC(MAX.)*1
PD *2
Tj
Tstg
Data Sheet
Values
-50
-12 to +5
-500
200
150
-55 to +150
Unit
V
V
mA
mW
°C
°C
lElectrical characteristics(Ta = 25°C)
Parameter
Symbol
Input voltage
VI(off)
VI(on)
Output voltage
VO(on)
Input current
II
Output current
IO(off)
DC current gain
GI
Input resistance
R1
Resistance ratio
R2/R1
Conditions
VCC = -5V, IO = -100μA
VO = -0.3V, IO = -20mA
IO / II = -50mA / -2.5mA
VI = -5V
VCC = -50V, VI = 0V
VO = -5V, IO = -50mA
-
-
Transition frequency
fT *1
VCE = -10V, IE = 50mA,
f = 100MHz
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint
Min.
-
-2.0
-
-
-
56
1.54
3.6
-
Typ.
-
-
-0.1
-
-
-
2.2
4.5
200
Max.
-0.3
-
-0.3
-3.6
-0.5
-
2.86
5.5
-
Unit
V
V
mA
mA
-
kW
-
MHz
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
2/6
2012.07 - Rev.F


Part Number DTB123Y
Description Digital transistor
Maker Rohm
Total Page 7 Pages
PDF Download
DTB123Y pdf
DTB123Y Datasheet PDF
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