R5007FNX
R5007FNX is Nch 500V 7A Power MOSFET manufactured by ROHM.
Features
1) Fast reverse recovery time (trr). 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Drive circuits can be simple. 6) Pb-free lead plating ; Ro HS pliant l Packaging specifications Packing
Bulk 500 R5007FNX
Reel size (mm) l Application
Switching Power Supply
Type
Tape width (mm) Basic ordering unit (pcs) Taping code Marking l Absolute maximum ratings (Ta = 25°C)
Parameter Drain
- Source voltage Continuous drain current Pulsed drain current Gate
- Source voltage Avalanche energy, single pulse Avalanche energy, repetitive Avalanche current Power dissipation (Tc = 25°C) Junction temperature Range of storage temperature Reverse diode dv/dt
.rohm. © 2014 ROHM Co., Ltd. All rights reserved.
Symbol VDSS TC = 25°C TC = 100°C ID- 1 ID- 1 ID,pulse- 2 VGSS EAS- 3 EAR- 4 IAR- 3 PD Tj Tstg dv/dt
Value 500 ±7 ±3.4 ±28 ±30 3.2 2.6 3.5 40 150 -55 to +150 15
Unit V A A A V m J m J A W
℃ ℃
V/ns
1/13
- Rev.001
Datasheet l Absolute maximum ratings
Parameter Drain
- Source voltage slope
Symbol dv/dt
Conditions VDS = 400V, ID = 7A Tj = 125℃
Values 50
Unit V/ns l Thermal resistance
Parameter Thermal resistance, junction
- case Thermal resistance, junction
- ambient Soldering temperature, wavesoldering for 10s
Symbol Min. Rth JC Rth JA Tsold
- Values Typ. Max. 3.125 70 265
Unit
℃/W ℃/W ℃ l Electrical characteristics (Ta = 25°C)
Parameter Drain
- Source breakdown voltage...