R5009ANJ
Nch 500V 9A Power MOSFET
Datasheet
VDSS RDS(on)(Max.)
ID PD
500V 0.72Ω ±9A 50W l Outline
LPT(S)
SC-83 TO-263
l Features
1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. 4) Drive circuits can be simple. 5) Parallel use is easy. 6) Pb-free lead plating ; Ro HS pliant l Inner circuit l Packaging specifications Packing
Embossed Tape
Reel size (mm)
330 l Application Switching Power Supply
Type Tape width (mm) Basic ordering unit (pcs)
24 1000
Taping code
Marking
R5009ANJ l Absolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Value
Unit
Drain
- Source voltage
Continuous drain current
Pulsed drain current Gate
- Source voltage Avalanche energy, single pulse Avalanche energy, repetitive Avalanche current Power dissipation (Tc = 25°C) Junction temperature Range of storage temperature
TC = 25°C TC = 100°C
VDSS ID- 1 ID- 1 ID,pulse- 2 VGSS EAS- 3 EAR- 4 IAR- 3 PD Tj Tstg
500 ±9 ±4.3...
