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Rohm Semiconductor Electronic Components Datasheet

R5011ANX Datasheet

10V Drive Nch MOSFET

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Transistors
10V Drive Nch MOSFET
R5011ANX
R5011ANX
zStructure
Silicon N-channel MOSFET
zFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Gate-source voltage (VGSS)
guaranteed to be r30V.
4) Drive circuits can be simple.
5) Parallel use is easy.
zDimensions (Unit : mm)
TO-220FM
10.0
φ3.2
4.5
2.8
(1)Base
(2)Collector
(3)Emitter
1.2
1.3
0.8
2.54 2.54
(1) (2) (3)
0.75
2.6
zApplications
Switching
zPackaging specifications
Package
Type Code
Basic ordering unit (pieces)
R5011ANX
Bulk
500
zInner circuit
zAbsolute maximum ratings (Ta=25qC)
Parameter
Symbol
Limits
Drain-source voltage
VDSS
500
Gate-source voltage
Drain current
Source current
(Body Diode)
Continuous
Pulsed
Continuous
Pulsed
VGSS
ID
IDP
IS
ISP
3
1
3
1
±30
±11
±44
11
44
Avalanche Current
IAS 2
5.5
Avalanche Energy
EAS 2
8.1
Total power dissipation (Tc=25°C)
PD
50
Channel temperature
Tch 150
Range of storage temperature
Tstg
1 Pw10μs, Duty cycle1%
2 L 500μH, VDD=50V, RG=25Ω, Starting, Tch=25°C
3 Limited only by maximum tempterature allowed
55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
°C
°C
(1)
(1) Gate
(2) Drain
(3) Source
1
(2) (3)
1 Body Diode
1/5


Rohm Semiconductor Electronic Components Datasheet

R5011ANX Datasheet

10V Drive Nch MOSFET

No Preview Available !

Transistors
zThermal resistance
Parameter
Channel to case
Symbol
Rth(ch-c)
Limits
2.5
Unit
°C/W
R5011ANX
zElectrical characteristics (Ta=25qC)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS
− ±100 nA VGS30V, VDS=0V
Drain-source breakdown voltage V(BR)DSS 500
V ID=1mA, VGS=0V
Zero gate voltage drain current IDSS
100 μA VDS=500V, VGS=0V
Gate threshold voltage
Static drain-source on-state resistance
Forward transfer admittance
VGS(th)
RDS(on)
| Yfs |
2.5
3.5
0.38
4.5
0.5
V VDS=10V, ID=1mA
Ω ID=5.5A, VGS=10V
S ID=5.5A, VDS=10V
Input capacitance
Ciss 1000 pF VDS=25V
Output capacitance
Coss 400 pF VGS=0V
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
35
26
28
75
30
30
7
12
pF f=1MHz
ns ID=5.5A, VDD 250V
ns VGS=10V
ns RL=45.5Ω
ns RG=10Ω
nC VDD 250V
ID=11A
nC VGS=10V
nC RL=22.7Ω / RG=10Ω
Pulsed
zBody diode characteristics (Source-drain) (Ta=25qC)
Parameter
Forward voltage
Pulsed
Symbol Min. Typ. Max. Unit
Conditions
VSD
1.5 V IS= 11A, VGS=0V
2/5


Part Number R5011ANX
Description 10V Drive Nch MOSFET
Maker Rohm
PDF Download

R5011ANX Datasheet PDF






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