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R5011ANX 10V Drive Nch MOSFET

R5011ANX Description

Transistors 10V Drive Nch MOSFET R5011ANX R5011ANX zStructure Silicon N-channel MOSFET z.

R5011ANX Features

* 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be r30V. 4) Drive circuits can be simple. 5) Parallel use is easy. zDimensions (Unit : mm) TO-220FM 10.0 φ3.2 4.5 2.8 15.0 12.0 2.5 8.0 (1)Base (2)Collector (3)Emitter 14.0 1.2 1.3 0.8 2.54 2.54 (1)

R5011ANX Applications

* Switching zPackaging specifications Package Type Code Basic ordering unit (pieces) R5011ANX Bulk
* 500 zInner circuit zAbsolute maximum ratings (Ta=25qC) Parameter Symbol Limits Drain-source voltage VDSS 500 Gate-source voltage Drain current Source current (Body Diode) Continuous

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Datasheet Details

Part number
R5011ANX
Manufacturer
ROHM ↗
File Size
211.74 KB
Datasheet
R5011ANX-Rohm.pdf
Description
10V Drive Nch MOSFET

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10V Drive Nch MOSFET Rohm
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