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Rohm Semiconductor Electronic Components Datasheet

R5013ANX Datasheet

10V Drive Nch MOSFET

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Transistors
10V Drive Nch MOSFET
R5013ANX
R5013ANX
zStructure
Silicon N-channel MOSFET
zFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Wide SOA (safe operating area).
4) Gate-source voltage (VGSS)
guaranteed to be r30V.
5) Drive circuits can be simple.
6) Parallel use is easy.
zDimensions (Unit : mm)
TO-220FM
10.0 φ3.2
4.5
2.8
(1)Base
(2)Collector
(3)Emitter
1.2
1.3
0.8
2.54 2.54
(1) (2) (3)
0.75
2.6
zApplications
Switching
zPackaging specifications
Package
Code
Type Basic ordering unit (pieces)
R5013ANX
Bulk
500
zInner circuit
zAbsolute maximum ratings (Ta=25qC)
Parameter
Symbol
Limits
Drain-source voltage
VDSS
500
Gate-source voltage
Drain current
Source current
(Body Diode)
Continuous
Pulsed
Continuous
Pulsed
VGSS
ID
IDP
IS
ISP
3
1
3
1
±30
±13
±52
13
52
Avalanche Current
IAS 2
13
Avalanche Energy
EAS 2
46
Total power dissipation (Tc=25°C)
PD
50
Channel temperature
Tch 150
Range of storage temperature
Tstg
1 Pw10μs, Duty cycle1%
2 L 500μH, VDD=50V, RG=25Ω, Starting, Tch=25°C
3 Limited only by maximum tempterature allowed
55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
°C
°C
zThermal resistance
Parameter
Channel to case
Symbol
Rth(ch-c)
Limits
2.5
(1)
(1) Gate
(2) Drain
(3) Source
Unit
°C/W
1
(2) (3)
1 Body Diode
Rev.A
1/5


Rohm Semiconductor Electronic Components Datasheet

R5013ANX Datasheet

10V Drive Nch MOSFET

No Preview Available !

Transistors
R5013ANX
zElectrical characteristics (Ta=25qC)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS
− ±100 nA VGS30V, VDS=0V
Drain-source breakdown voltage V(BR)DSS 500
V ID=1mA, VGS=0V
Zero gate voltage drain current IDSS
100 μA VDS=500V, VGS=0V
Gate threshold voltage
VGS(th)
2.5
4.5
V VDS=10V, ID=1mA
Static drain-source on-state resistance
RDS(on)
0.29 0.38
Ω ID=6.5A, VGS=10V
Forward transfer admittance
| Yfs | 4.0
S ID=6.5A, VDS=10V
Input capacitance
Ciss 1300 pF VDS=25V
Output capacitance
Coss 500 pF VGS=0V
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
40
30
32
90
30
35
8
15
pF f=1MHz
ns ID=6.5A, VDD 250V
ns VGS=10V
ns RL=38.5Ω
ns RG=10Ω
nC VDD 250V
ID=13A
nC VGS=10V
nC RL=19.2Ω / RG=10Ω
Pulsed
zBody diode characteristics (Source-drain) (Ta=25qC)
Parameter
Forward voltage
Pulsed
Symbol Min. Typ. Max. Unit
Conditions
VSD
1.5 V IS= 13A, VGS=0V
Rev.A
2/5


Part Number R5013ANX
Description 10V Drive Nch MOSFET
Maker Rohm
Total Page 6 Pages
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