R5013ANX
R5013ANX is 10V Drive Nch MOSFET manufactured by ROHM.
Transistors
10V Drive Nch MOSFET
R5013ANX z Structure Silicon N-channel MOSFET z Features 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be r30V. 5) Drive circuits can be simple. 6) Parallel use is easy. z Dimensions (Unit : mm)
TO-220FM
10.0 φ3.2
4.5 2.8
15.0 12.0
2.5 8.0
(1)Base (2)Collector (3)Emitter
1.2 1.3
2.54 2.54 (1) (2) (3)
2.6 z Applications Switching z Packaging specifications
Package Code Type Basic ordering unit (pieces) R5013ANX
Bulk
- 500 z Inner circuit z Absolute maximum ratings (Ta=25q C)
Parameter
Symbol
Limits
Drain-source voltage
VDSS
Gate-source voltage
Drain current
Source current (Body Diode)
Continuous Pulsed Continuous Pulsed
VGSS ID IDP IS ISP
∗3 ∗1 ∗3 ∗1
±30 ±13 ±52 13 52
Avalanche Current
IAS ∗2
Avalanche Energy
EAS ∗2
Total power dissipation (Tc=25°C)
Channel...
