R5016ANJ Datasheet PDF

R5016ANJ Nch 500V 16A Power MOSFET Datasheet VDSS RDS(on)(Max.) ID PD 500V 0.27Ω ±16A 100W lOutline LPT(S) SC-83 TO-263 lFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. 4) Drive circuits can be simple. 5) Parallel use is easy. 6) Pb-free lead plating ; RoHS compliant lInner circuit lPackaging specifications Packing Embossed Tape Reel size (mm) 330 lApplication Switching Power Supply Type Tape width (mm) Basic ordering unit (pcs) 24 1000 Taping code TL Marking R5016ANJ lAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Avalanche energy, single pulse Avalanche energy, repetitive Avalanche current Power dissipation (Tc = 25°C) Junction temperature Range of storage temperature TC = 25°C TC = 100°C VDSS ID*1 ID*1 ID,pulse*2 VGSS EAS*3 EAR*4 IAR*3 PD Tj Tstg 500 ±16 ±7.8 ±64 ±30 18 6.7 8 100 150 -55 to +150 V A A A V mJ mJ A W ℃ ℃ Reverse diode dv/dt dv/dt 15 V/ns © 2015 ROHM Co., Ltd.