R5016ANX Datasheet PDF

R5016ANX Nch 500V 16A Power MOSFET Datasheet VDSS RDS(on)(Max.) ID PD 500V 0.27Ω ±16A 50W lOutline TO-220FM lFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. 4) Drive circuits can be simple. 5) Parallel use is easy. 6) Pb-free lead plating ; RoHS compliant lInner circuit lPackaging specifications Packing Bulk Reel size (mm) - lApplication Switching Power Supply Tape width (mm) Type Basic ordering unit (pcs) 500 Taping code - Marking R5016ANX lAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Avalanche energy, single pulse Avalanche energy, repetitive Avalanche current Power dissipation (Tc = 25°C) Junction temperature Range of storage temperature Reverse diode dv/dt TC = 25°C TC = 100°C VDSS ID*1 ID*1 ID,pulse*2 VGSS EAS*3 EAR*4 IAR*3 PD Tj Tstg dv/dt 500 ±16 ±7.8 ±64 ±30 17 3.5 8 50 150 -55 to +150 15 V A A A V mJ mJ A W ℃ ℃ V/ns © 2014 ROHM Co., Ltd.