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Rohm Semiconductor Electronic Components Datasheet

R6006ANX Datasheet

Nch 600V 6A Power MOSFET

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R6006ANX
Nch 600V 6A Power MOSFET
Datasheet
VDSS
RDS(on) (Max.)
ID
PD
600V
1.2W
6A
40W
lOutline
TO-220FM
(1)(2)(3)
lFeatures
1) Low on-resistance.
lInner circuit
2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed to be 30V.
4) Drive circuits can be simple.
(1) Gate
(2) Drain
(3) Source
*1 Body Diode
5) Parallel use is easy.
6) Pb-free lead plating ; RoHS compliant
lPackaging specifications
Packing
Bulk
Reel size (mm)
-
lApplication
Switching Power Supply
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
-
500
-
Marking
R6006ANX
lAbsolute maximum ratings (Ta = 25C)
Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current
Power dissipation (Tc = 25C)
Junction temperature
Range of storage temperature
Reverse diode dv/dt
Tc = 25C
Tc = 100C
VDSS
ID *1
ID *1
ID,pulse *2
VGSS
EAS *3
EAR *4
IAR *3
PD
Tj
Tstg
dv/dt *5
600
6
2.9
24
30
2.4
1.9
3
40
150
-55 to +150
15
V
A
A
A
V
mJ
mJ
A
W
C
C
V/ns
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
1/13
2012.01 - Rev.B


Rohm Semiconductor Electronic Components Datasheet

R6006ANX Datasheet

Nch 600V 6A Power MOSFET

No Preview Available !

R6006ANX
lAbsolute maximum ratings
Parameter
Drain - Source voltage slope
Data Sheet
Symbol
Conditions
dv/dt
VDS = 480V, ID = 6A
Tj = 125C
Values Unit
50 V/ns
lThermal resistance
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient
Soldering temperature, wavesoldering for 10s
Symbol
RthJC
RthJA
Tsold
Values
Min. Typ. Max.
Unit
- - 3.125 C/W
- - 70 C/W
- - 265 C
lElectrical characteristics (Ta = 25C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = 1mA
Values
Min. Typ. Max.
Unit
600 - - V
Drain - Source avalanche
breakdown voltage
Zero gate voltage
drain current
Gate - Source leakage current
Gate threshold voltage
Static drain - source
on - state resistance
Gate input resistance
V(BR)DS VGS = 0V, ID = 6A
VDS = 600V, VGS = 0V
IDSS Tj = 25C
Tj = 125°C
IGSS VGS = 30V, VDS = 0V
VGS (th) VDS = 10V, ID = 1mA
VGS = 10V, ID = 3A
RDS(on) *6 Tj = 25C
Tj = 125°C
RG f = 1MHz, open drain
-
-
-
-
2.5
-
-
-
700 -
V
0.1 100 mA
- 1000
- 100 nA
- 4.5 V
0.9 1.2
1.9 -
7.6 -
W
W
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
2/13
2012.01 - Rev.B


Part Number R6006ANX
Description Nch 600V 6A Power MOSFET
Maker Rohm
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R6006ANX Datasheet PDF





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