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Rohm Semiconductor Electronic Components Datasheet

R6008FNX Datasheet

Nch 600V 8A Power MOSFET

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R6008FNX
Nch 600V 8A Power MOSFET
Datasheet
VDSS
RDS(on) (Max.)
ID
PD
600V
0.95W
8A
50W
lOutline
TO-220FM
(1)(2)(3)
lFeatures
1) Low on-resistance.
lInner circuit
2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed to be 30V.
4) Drive circuits can be simple.
(1) Gate
(2) Drain
(3) Source
*1 Body Diode
5) Parallel use is easy.
6) Pb-free lead plating ; RoHS compliant
lPackaging specifications
Packaging
Bulk
Reel size (mm)
-
lApplication
Switching Power Supply
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
-
500
-
Marking
R6008FNX
lAbsolute maximum ratings(Ta = 25°C)
Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current
Power dissipation (Tc = 25°C)
Junction temperature
Range of storage temperature
Reverse diode dv/dt
Tc = 25°C
Tc = 100°C
VDSS
ID *1
ID *1
ID,pulse *2
VGSS
EAS *3
EAR *4
IAR *3
PD
Tj
Tstg
dv/dt *5
600
8
3.9
32
30
4.3
3.4
4
50
150
-55 to +150
15
V
A
A
A
V
mJ
mJ
A
W
°C
°C
V/ns
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
1/13
2012.10 - Rev.B


Rohm Semiconductor Electronic Components Datasheet

R6008FNX Datasheet

Nch 600V 8A Power MOSFET

No Preview Available !

R6008FNX
lAbsolute maximum ratings
Parameter
Drain - Source voltage slope
Data Sheet
Symbol
Conditions
dv/dt
VDS = 480V, ID = 8A
Tj = 125°C
Values Unit
50 V/ns
lThermal resistance
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient
Soldering temperature, wavesoldering for 10s
Symbol
RthJC
RthJA
Tsold
Values
Min. Typ. Max.
Unit
- - 2.5 °C/W
- - 70 °C/W
- - 265 °C
lElectrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = 1mA
Values
Min. Typ. Max.
Unit
600 - - V
Drain - Source avalanche
breakdown voltage
V(BR)DS VGS = 0V, ID = 8A
- 700 -
V
Zero gate voltage
drain current
VDS = 600V, VGS = 0V
IDSS Tj = 25°C
Tj = 125°C
-
-
mA
1 100
- 10 mA
Gate - Source leakage current
IGSS VGS = 30V, VDS = 0V
-
- 100 nA
Gate threshold voltage
VGS (th) VDS = 10V, ID = 1mA
2
-
4
V
Static drain - source
on - state resistance
VGS = 10V, ID = 4A
RDS(on) *6 Tj = 25C
Tj = 125°C
-
0.73 0.95
W
- 1.62 -
Gate input resistance
RG f = 1MHz, open drain
-
8.0
-
W
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
2/13
2012.10 - Rev.B


Part Number R6008FNX
Description Nch 600V 8A Power MOSFET
Maker Rohm
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R6008FNX Datasheet PDF





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