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Rohm Semiconductor Electronic Components Datasheet

RB050PS-30 Datasheet

Schottky barrier diode

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Diodes
Schottky barrier diode
RB050PS-30
zApplications
Rectifying small power
zFeatures
1) High power mold type.
(TSOP8)
2) Low IR
3) High reliability
zConstruction
Silicon epitaxial planar
zExternal dimensions (Unit : mm)
(8) (7) (6) (5)
1pin mark
φ1.4
0~0.1
1.1 (1)
0.4-+00..015
(2) (3)
1.27 0.635
(4)
5±0.1
0.
22
+0.1
-0.05
0.9±0.05
3.9
ROHM : TSOP8
Manufacture Date
zTaping dimensions (Unit : mm)
2.0±0.05
4.0±0.1
8.0±0.1
RB050PS-30
zLand size figure
4.56
1.27
TSOP8
0.75
zStructure
φ1.55±0.1
      0
0.37±0.1
6.4±0.1
1PIN
8.0±0.1
φ1.55±0.05
zAbsolute maximum ratings (Ta=25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current (*1)
Forward current surge peak (60Hz1cyc)
Junction temperature
Storage temperature
(*1)Tc=100max
Symbol
VRM
VR
Io
IFSM
Tj
Tstg
Limits
30
30
3
35
150
-40 to +150
Unit
V
V
A
A
zElectrical characteristic (Ta=25°C)
Parameter
Forward voltage
Reverse current
Symbol Min. Typ. Max.
VF - - 0.425
IR - - 200
Unit Conditions
V IF=3.0A
µA VR=30V
1.2±0.2
Rev.A
1/3


Rohm Semiconductor Electronic Components Datasheet

RB050PS-30 Datasheet

Schottky barrier diode

No Preview Available !

Diodes
RB050PS-30
zElectrical characteristic curves
10 Ta=150℃
Ta= 1 2 5 ℃
1
0.1
0.01
Ta= 7 5 ℃
Ta= 2 5 ℃
Ta= - 2 5 ℃
0.001
0
100 200 300 400 500
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
600
1000000
100000
10000
1000
100
10
1
0.1
0.01
0
Ta=150℃ Ta=125℃
Ta= 7 5 ℃
Ta= 2 5 ℃
Ta= - 2 5 ℃
5 10 15 20 25
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
30
10000
1000
100
10
0
f=1MHz
10 20
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
30
430
420
410
400
390
380
300
250
200
150
100
50
0
1000
100
10
1
Ta= 2 5 ℃
IF= 3 A
n = 3 0 pc s
AVE:404.1mV
VF DISPERSION MAP
300 1700
Ta= 2 5 ℃
1690
250
VR=30V
1680
n = 3 0 pc s
1670
200
1660
150
100 AVE:39.2uA
1650
1640
1630
1620
50
1610
0 1600
IR DISPERSION MAP
Ta= 2 5 ℃
f=1MHz
VR=0V
n = 1 0 pc s
A V E:1 6 3 9 .8 pF
Ct DISPERSION MAP
Ifsm 1cyc
8.3ms
AVE:105.0A
IFSM DISRESION MAP
Ifsm
t
30 1000
Ta= 2 5 ℃
25 IF=0.5A
IR = 1 A
Irr= 0 .2 5 * IR
20 n=10pcs
AVE:20.4ns
15
100
10
5
0
trr DISPERSION MAP
10
1
1000
Mounted on epoxy board
IM=100mA
IF=1.5A
100 1ms time
300us
R th ( j- a)
10
R th ( j- c )
2
1.5
1
0.5
Ifsm
8.3ms 8.3ms
1 c yc
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
Sin ( θ = 1 8 0 )
D=1/2
DC
10
TIM E:t(m s)
IFSM-t CHARACTERISTICS
1
100 0.001
0.1
0
10
1000
012345
TIM E:t( s)
Rth-t CHARACTERISTICS
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
Rev.A
2/3


Part Number RB050PS-30
Description Schottky barrier diode
Maker Rohm
Total Page 4 Pages
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