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RB215T-60 - Schottky barrier diode

Key Features

  • 1) Cathode common type. (TO-220) 2) Low IR 3) High reliability 1.2 10.0±0.3 　　　 0.1 2.8±0.2 　　　 0.1 15.0±0.4 　 0.2 13.5MIN ① zConstruction Silicon epitaxial planar 1.3 0.8 (1) (2) (3) 5.0±0.2 0.7±0.1 0.05 8.0 2.6±0.5 ROHM : ＴO220FN ① Manufacture Date zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak Junction temperature Storage temperature (.
  • 1)Tc=100℃max Per chip : Io/.

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Datasheet Details

Part number RB215T-60
Manufacturer ROHM
File Size 177.56 KB
Description Schottky barrier diode
Datasheet download datasheet RB215T-60 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RB215T-60 Diodes Schottky barrier diode RB215T-60 zApplications Switching power supply zExternal dimensions (Unit : mm) 4.5±0.3 　　　 0.1 zStructure 8.0±0.2 12.0±0.2 zFeatures 1) Cathode common type. (TO-220) 2) Low IR 3) High reliability 1.2 10.0±0.3 　　　 0.1 2.8±0.2 　　　 0.1 15.0±0.4 　 0.2 13.5MIN ① zConstruction Silicon epitaxial planar 1.3 0.8 (1) (2) (3) 5.0±0.2 0.7±0.1 0.05 8.0 2.6±0.