Datasheet4U Logo Datasheet4U.com

RFN20NS6S - Super Fast Recovery Diode

Features

  • 1)Low switching loss 2)High current overload capacity LPDS zStructure zConstruction Silicon epitaxial planer type ROHM : LPDS JEITA : TO263S ձ Manufacture Date zTaping Dimensions(Unit : mm) zAbsolute Maximum Ratings(Tc=25°C) Parameter Repetitive peak reverse voltage Reverse voltage Average rectified foward current Forward current surge peak Junction temperature Storage temperature zElectrical Characteristics(Tj=25°C) Parameter Forward voltage Reverse current Reverse recovery time Thermal.

📥 Download Datasheet

Datasheet preview – RFN20NS6S

Datasheet Details

Part number RFN20NS6S
Manufacturer ROHM
File Size 418.49 KB
Description Super Fast Recovery Diode
Datasheet download datasheet RFN20NS6S Datasheet
Additional preview pages of the RFN20NS6S datasheet.

📁 Similar Datasheet

  • RFN6BM2D - Ultrafast Rectifier (INCHANGE)
  • RFNL5TJ6S - Ultrafast Rectifier (INCHANGE)
Other Datasheets by Rohm

Full PDF Text Transcription

Click to expand full text
Data Sheet Super Fast Recovery Diode RFN20NS6S zSerise Standard Fast Recovery zDimensions(Unit : mm) zLand Size Figure(Unit : mm) zApplications General rectification RFN20 NS6S ձ zFeatures 1)Low switching loss 2)High current overload capacity LPDS zStructure zConstruction Silicon epitaxial planer type ROHM : LPDS JEITA : TO263S ձ Manufacture Date zTaping Dimensions(Unit : mm) zAbsolute Maximum Ratings(Tc=25°C) Parameter Repetitive peak reverse voltage Reverse voltage Average rectified foward current Forward current surge peak Junction temperature Storage temperature zElectrical Characteristics(Tj=25°C) Parameter Forward voltage Reverse current Reverse recovery time Thermal resistance Symbol VF IR trr Rth(j-c) Conditions IF=20A VR=600V IF=0.5A,IR=1A,Irr=0.
Published: |