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RFN20NS3S - Super Fast Recovery Diode

Key Features

  • 1)Low switching loss 2)High current overload capacity zConstruction Silicon epitaxial planer type ROHM : LPDS JEITA : TO263S Manufacture Date zTaping Dimensions(Unit : mm) Data Sheet zLand Size Figure(Unit : mm) LPDS zStructure zAbsolute Maximum Ratings(Tc=25°C) Parameter Repetitive peak reverse voltage Reverse voltage Average rectified foward current Forward current surge peak Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg Conditions Duty0.5 Direct voltage 60Hz ha.

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Datasheet Details

Part number RFN20NS3S
Manufacturer ROHM
File Size 452.77 KB
Description Super Fast Recovery Diode
Datasheet download datasheet RFN20NS3S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Super Fast Recovery Diode RFN20NS3S zSerise Standard Fast Recovery zApplications General rectification zDimensions(Unit : mm) RFN20 NS3S zFeatures 1)Low switching loss 2)High current overload capacity zConstruction Silicon epitaxial planer type ROHM : LPDS JEITA : TO263S Manufacture Date zTaping Dimensions(Unit : mm) Data Sheet zLand Size Figure(Unit : mm) LPDS zStructure zAbsolute Maximum Ratings(Tc=25°C) Parameter Repetitive peak reverse voltage Reverse voltage Average rectified foward current Forward current surge peak Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg Conditions Duty0.