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RFN20NS6S - Super Fast Recovery Diode

Key Features

  • 1)Low switching loss 2)High current overload capacity LPDS zStructure zConstruction Silicon epitaxial planer type ROHM : LPDS JEITA : TO263S ձ Manufacture Date zTaping Dimensions(Unit : mm) zAbsolute Maximum Ratings(Tc=25°C) Parameter Repetitive peak reverse voltage Reverse voltage Average rectified foward current Forward current surge peak Junction temperature Storage temperature zElectrical Characteristics(Tj=25°C) Parameter Forward voltage Reverse current Reverse recovery time Thermal.

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Datasheet Details

Part number RFN20NS6S
Manufacturer ROHM
File Size 418.49 KB
Description Super Fast Recovery Diode
Datasheet download datasheet RFN20NS6S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Data Sheet Super Fast Recovery Diode RFN20NS6S zSerise Standard Fast Recovery zDimensions(Unit : mm) zLand Size Figure(Unit : mm) zApplications General rectification RFN20 NS6S ձ zFeatures 1)Low switching loss 2)High current overload capacity LPDS zStructure zConstruction Silicon epitaxial planer type ROHM : LPDS JEITA : TO263S ձ Manufacture Date zTaping Dimensions(Unit : mm) zAbsolute Maximum Ratings(Tc=25°C) Parameter Repetitive peak reverse voltage Reverse voltage Average rectified foward current Forward current surge peak Junction temperature Storage temperature zElectrical Characteristics(Tj=25°C) Parameter Forward voltage Reverse current Reverse recovery time Thermal resistance Symbol VF IR trr Rth(j-c) Conditions IF=20A VR=600V IF=0.5A,IR=1A,Irr=0.