RFN20TJ6S diode equivalent, super fast recovery diode.
1) Low forward voltage 2) Low switching loss 3) High current overload capacity
lConstruction Silicon epitaxial planar type
lDimensions (Unit : mm)
f3.1±0.1 10.2±0.2
4.5.
indicated in this document. 7) The Products specified in this document are not designed to be radiation tolerant. 8) For.
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