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Rohm Semiconductor Electronic Components Datasheet

RFN20TJ6S Datasheet

Super Fast Recovery Diode

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Super Fast Recovery Diode
RFN20TJ6S
Data Sheet
lSeries
Standard Fast Recovery
lApplication
General rectification
lFeatures
1) Low forward voltage
2) Low switching loss
3) High current overload capacity
lConstruction
Silicon epitaxial planar type
lDimensions (Unit : mm)
f3.1±0.1
10.2±0.2
4.5±0.1
2.6±0.1
lStructure
RFN20
TJ6S 1
2
1.4±0.2
Cathode Anode
2.6±0.1
2.54±0.1
0.83±0.1
5.08±0.1
0.6±0.1
ROHM : TO220ACFP
1 : Manufacture year, week,day, package code
2 : Serial number
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
VRM
Duty0.5
600 V
Reverse voltage
VR Direct reverse voltage
600 V
Average current
Io 60Hz half sin wave , resistive load Tc=50°C
20
A
Non-repetitive forward surge current IFSM 60Hz half sin wave, one cycle, non-repetitive at Tj=25°C
150
A
Operating junction temperature
Tj
-
150 °C
Storage temperature
Tstg
- -55 to +150 °C
lElectrical Characteristics (Tj = 25°C)
Parameter
Symbol
Conditions
Min.
Forward voltage
VF
IF=20A
Tj=25°C 1.0
Tj=125°C -
Reverse current
IR
VR=600V
Tj=25°C
Tj=125°C
-
-
Reverse recovery time
Forward recovery time
Forward recovery voltage
trr IF=0.5A, IR=1A, Irr=0.25×IR -
IF=20A, VR=400V, dIF/dt=-100A/ms -
tfr IF=20A, dIF/dt=100A/ms, -
VFp
VFR=1.1xVFmax
-
Thermal resistance
Rth(j-a)
Rth(j-c)
Junction to ambient
Junction to case
-
-
Typ.
1.25
1.1
0.1
7
40
85
300
3.2
-
-
Max. Unit
1.55 V
-V
10 mA
200 mA
60 ns
140 ns
- ns
-V
7.5 °C/W
2.5 °C/W
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/5
2015.04 - Rev.A


Rohm Semiconductor Electronic Components Datasheet

RFN20TJ6S Datasheet

Super Fast Recovery Diode

No Preview Available !

RFN20TJ6S
lElectrical Characteristic Curves
Data Sheet
100
10
1
Tj = 150°C
Tj = 125°C
0.1
Tj = 75°C
Tj = 25°C
0.01
0
500 1000 1500 2000 2500
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
100000
10000
1000
Tj = 150°C
Tj = 125°C
Tj = 75°C
100 Tj = 25°C
10
1
0 100 200 300 400 500 600
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
1000
100
f = 1MHz
Ta = 25°C
10
0
5 10 15 20 25
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
30
1000
100
Tj = 25°C
10
IFSM
8.3ms 8.3ms
1cyc.
1
1 10 100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
2/5
2015.04 - Rev.A


Part Number RFN20TJ6S
Description Super Fast Recovery Diode
Maker Rohm
Total Page 6 Pages
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