1) Ultra low forward voltage 2) Low switching loss 3) High current overload capacity lConstruction Silicon epitaxial planar type lDimensions (Unit : mm) f3.1±0.1 10.2±0..

indicated in this document. 7) The Products specified in this document are not designed to be radiation tolerant. 8) For.

RFNL10TJ6S

RFNL20TJ6S

RFNL5BGE6S

RFNL5BM6SFH

RFNL5TJ6S

RFN10BM3S

RFN10BM3SFH

RFN10BM6S

RFN10BM6SFH

RFN10NS3S

RFN10NS4SFH

RFN10T2D

RFN10TF6S