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Super Fast Recovery Diode
RFUS20TM4S
Series Ultra Fast Recovery Dimensions (Unit : mm)
+0.3 −0.1 +0.3 −0.1 +0.2 −0.1
Structure
Features 1)Ultra low switching loss 2)High current overload capacity 3)Cathode common single type
+0.4 −0.2
Applications General rectification
(1)
(2)
(3)
Construction Silicon epitaxial planer
+0.1 −0.05
Absolute maximum ratings (Tc=25C) Parameter Symbol Repetitive peak reverse voltage VRM Reverse voltage VR Average rectified forward current Forward current surge peak Junction temperature Storage temperature Io IFSM Tj Tstg
Conditions Duty0.