Datasheet4U Logo Datasheet4U.com

RFUS20TM6S - Super Fast Recovery Diode

Features

  • 1)Cathode Common Single type. (TO-220) 2)Ultra High switching speed (1) (2) (3) +0.1 -0.05.
  • Construction Silicon epitaxial planar.
  • Absolute maximum ratings (Tc=25C) Parameter Symbol Repetitive peak reverse voltage Reverse voltage Average rectified forward current Forward current surge peak Junction temperature Storage temperature VRM VR Io IFSM Tj Tstg +0.4 -0.2 (1) (2) (3) Conditions Duty≦0.5 Direct voltage 60Hz half sin wave, Resistance load, Limits 600 600 20 100 150 -55 to 1.

📥 Download Datasheet

Datasheet preview – RFUS20TM6S

Datasheet Details

Part number RFUS20TM6S
Manufacturer ROHM
File Size 351.31 KB
Description Super Fast Recovery Diode
Datasheet download datasheet RFUS20TM6S Datasheet
Additional preview pages of the RFUS20TM6S datasheet.

📁 Similar Datasheet

  • RFUV1003 - 12GHZ TO 16GHZ GAAS MMIC IQ UPCONVERTER (RFMD)
  • RFUV1703 - 21GHz TO 26.5GHz GaAs MMIC IQ UPCONVERTER (RF Micro Devices)
Other Datasheets by Rohm

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com Super Fast Recovery Diode RFUS20TM6S Series Ultra Fast Recovery Dimensions(Unit : mm) +0.3 -0.1 +0.3 -0.1 +0.2 -0.1 Structure Applications General rectification Features 1)Cathode Common Single type.(TO-220) 2)Ultra High switching speed (1) (2) (3) +0.1 -0.05 Construction Silicon epitaxial planar Absolute maximum ratings (Tc=25C) Parameter Symbol Repetitive peak reverse voltage Reverse voltage Average rectified forward current Forward current surge peak Junction temperature Storage temperature VRM VR Io IFSM Tj Tstg +0.4 -0.2 (1) (2) (3) Conditions Duty≦0.
Published: |