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Rohm Semiconductor Electronic Components Datasheet

SCT2160KEHR Datasheet

N-channel SiC power MOSFET

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SCT2160KEHR
Automotive Grade N-channel SiC power MOSFET
Datasheet
VDSS
RDS(on) (Typ.)
ID
PD
1200V
160mΩ
22A
165W
lFeatures
1) Low on-resistance
2) Fast switching speed
3) Fast reverse recovery
4) Easy to parallel
5) Simple to drive
6) Pb-free lead plating ; RoHS compliant
7) Qualified to AEC-Q101
lApplication
Automobile
Switch mode power supplies
lOutline
TO-247N
lInner circuit
(1) (2) (3)
(1) Gate
(2) Drain
(3) Source
*1 Body Diode
lPackaging specifications
Package
Packing
Reel size (mm)
Tape width (mm)
Type
Basic ordering unit (pcs)
Packing code
Marking
TO-247N
Tube
-
-
30
C11
SCT2160KE
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Tc = 25°C
Tc = 100°C
Pulsed drain current
Gate - Source voltage (DC)
Gate - Source surge voltage (Tsurge ˂ 300nsec)
Power dissipation (Tc = 25°C)
Junction temperature
Range of storage temperature
Symbol
VDSS
ID *1
ID *1
ID,pulse *2
VGSS
VGSS_surge*3
PD
Tj
Tstg
Value
1200
22
16
55
-6 to 22
-10 to 26
165
175
-55 to +175
Unit
V
A
A
A
V
V
W
°C
°C
www.rohm.com
© 2019 ROHM Co., Ltd. All rights reserved.
TSZ2211114001
1/12
TSQ50211-SCT2160KEHR
22.Feb.2019 - Rev.001


Rohm Semiconductor Electronic Components Datasheet

SCT2160KEHR Datasheet

N-channel SiC power MOSFET

No Preview Available !

SCT2160KEHR
Datasheet
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = 1mA
1200
-
-
V
Zero gate voltage
drain current
Gate - Source leakage current
Gate - Source leakage current
Gate threshold voltage
VDS = 1200V, VGS = 0V
IDSS Tj = 25°C
-
Tj = 150°C
-
IGSS+ VGS = +22V, VDS = 0V
-
IGSS- VGS = -6V, VDS = 0V
-
VGS (th) VDS = VGS, ID = 2.5mA
1.6
1
10
μA
2
-
-
100 nA
-
-100 nA
2.8 4.0
V
lThermal resistance
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient
Soldering temperature, wavesoldering for 10s
Symbol
RthJC
RthJA
Tsold
Values
Unit
Min. Typ. Max.
-
0.70 0.91 °C/W
-
-
50 °C/W
-
-
265 °C
lTypical Transient Thermal Characteristics
Symbol
Value
Unit
Rth1
9.61E-02
Rth2
4.04E-01
K/W
Rth3
1.96E-01
Symbol
Cth1
Cth2
Cth3
Value
1.55E-03
5.23E-03
8.33E-02
Unit
Ws/K
www.rohm.com
© 2019 ROHM Co., Ltd. All rights reserved.
TSZ2211115001
2/12
TSQ50211-SCT2160KEHR
22.Feb.2019 - Rev.001


Part Number SCT2160KEHR
Description N-channel SiC power MOSFET
Maker Rohm
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