TFZV9.1B
Overview
- 80 0.05 +0.20 0.60-0.10 ROHM : TUMD2M dot (year week factory) + day EX. TFZV3.6B lTaping Dimensions (Unit : mm) TUMD2M lStructure Cathode Anode
- 0±0.1 2.0±0.05 φ1.15.555±0.01.1 0
- 25±0.05
- 75±0.1
- 5±0.05 2.75
- 0±0.2 2.8±0.05
- 43±0.05
- 0±0.1 φ1.01.0±0.20.2 0
- 9±0.08 lAbsolute Maximum Ratings (Ta = 25°C) Parameter Symbol Limits Unit Power dissipation (*) P 500 mW Junction temperature Storage temperature Operating temperature Tj 150 Tstg -55 to +150 Topr -55 to +150 °C °C °C (*) Device mounted on glass-epoxy board(50×50mm, t=1.6mm) Solder land (10×10mm) © 2014 ROHM Co., Ltd. All rights reserved. 1/6
- 08 - Rev.A TFZV series Data Sheet lElectrical Characteristics (Ta= 25°C) Symbol TYP. Zener voltage : VZ(V) Dynamic Impedance : Reverse current : ZZ(W) IR(mA) MIN. MAX. IZ(mA) MAX. IZ(mA) MAX. VR(V) TFZV 2.0B 2.020 2.200 20 140 20 120 0.5 TFZV 2.2B 2.220 2.410 20 120 20 120 0.7 TFZV 2.4B 2.430 2.630 20 100 20 120 1.0 TFZV 2.7B 2.690 2.910 20 100 20 100 1.0 TFZV 3.0B 3.010 3.220 20 80 20 50 1.0 TFZV 3.3B 3.320 3.530 20 70 20 20 1.0 TFZV 3.6B 3.600 3.845 20 60 20 10 1.0 TFZV 3.9B 3.890 4.160 20 50 20 5 1.0 TFZV 4.3B 4.170 4.430 20 40 20 5 1.0 TFZV 4.7B 4.550 4.800 20 25 20 5 1.0 TFZV 5.1B 4.940 5.200 20 20 20 5 1.5 TFZV 5.6B 5.450 5.730 20 13 20 5 2.5 TFZV 6.2B 5.960 6.270 20 10 20 5 3.0 TFZV 6.8B 6.490 6.830 20 8 20 2 3.5 TFZV 7.5B 7.070 7.450 20 8 20 0.5 4.0 TFZV 8.2B 7.780 8.190 20 8 20 0.5 5.
