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RLT83500GOP
TECHNICAL DATA
High Power Infrared Laser Diode
Lasing wavelength: 830 nm typ. Max. optical power: 500 mW, cw Emitting Aperture: 1x50 μm² Package: 9 mm
PIN CONNECTION:
1) Laserdiode cathode 2) Laserdiode anode 3) n.c.
Specification (Tc = 25°C)
CHARACTERISTIC
Optical Output Power Threshold Current Operation Current Operation Voltage Slope Efficiency Series Resistance Central Wavelength Spectral Width Wavelength Temperature Coefficient Beam Divergence Beam Divergence Polarization Reverse Voltage Operating Temperature Storage Temperature
MIN
0.5 ≤0.25 ≤0.95 ≤2.1 ≥0.80 0.80 830 ±10
≤3 0.3 10 40 TE 2.0 10 - 30 -10 – 70
03.08.2010
rlt83500gop.doc
UNIT W A A V W/A Ω nm nm
nm/°C deg deg
V °C °C
1 of 2
PACKAGE DIMENSIONS:
Operating notes:
1.
RLT83500GOP Datasheet
