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RLT8505MG - Infrared Laser diode

Features

  • AlGaAs laser diode.
  • Peak Wavelength: 850 nm.
  • Optical Ouput Power: 5 mW.
  • Package: 5.6 mm, with photo diode Electrical Connection Pin Configuration n-type PIN Function 1 LD Cathode 2 LD Anode, PD Cathode 3 PD Anode Bottom View Absolute Maximum Ratings (TC=25°C) Item CW Output Power LD Reverse Voltage PD Reverse Voltage Operating Case Temperature Storage Temperature Symbol PO VR (LD) VR (PD) TC Tstg Value 5 2 30 -10 … +40 -40 … +85 Specifications (TC=25°C).

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Datasheet Details

Part number RLT8505MG
Manufacturer Roithner
File Size 164.83 KB
Description Infrared Laser diode
Datasheet download datasheet RLT8505MG Datasheet
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Full PDF Text Transcription

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RLT8505MG TECHNICAL DATA Infrared Laser Diode Features • AlGaAs laser diode • Peak Wavelength: 850 nm • Optical Ouput Power: 5 mW • Package: 5.6 mm, with photo diode Electrical Connection Pin Configuration n-type PIN Function 1 LD Cathode 2 LD Anode, PD Cathode 3 PD Anode Bottom View Absolute Maximum Ratings (TC=25°C) Item CW Output Power LD Reverse Voltage PD Reverse Voltage Operating Case Temperature Storage Temperature Symbol PO VR (LD) VR (PD) TC Tstg Value 5 2 30 -10 … +40 -40 … +85 Specifications (TC=25°C) Item Optical Specifications CW Output Power Peak Wavelength * FWHM Beam Divergence Electrical Specifications Threshold Current Operating Current Slope Efficiency Operating Voltage Monitor Current * Measuring specifications. Symbol PO λP θ║ θ┴ Ith Iop η Uop Im Min.
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