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RLT85100MG - Laser diode

Description

SYMBOL RATED VALUE

Features

  • Index Guided MQW Structure.
  • Wavelength : 850 nm (Typ. ).
  • Optical Power : 100 mW CW.
  • Threshold Current : 100 mA ( Typ. ).
  • Package Style : TO-18 (5.6 mmØ) Optical Power (mW) Operation Temperature (oC) Storage Temperature (oC) LD Reverse Voltage (V) PD Reverse Voltage (V) Po Top Tstg VLDR VPDR 100 -10 to +50 -40 to +85 2 30.

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Datasheet Details

Part number RLT85100MG
Manufacturer Roithner
File Size 144.41 KB
Description Laser diode
Datasheet download datasheet RLT85100MG Datasheet

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Full PDF Text Transcription

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RLT85100MG Laser Diode Technical Data ABSOLUTE MAXIMUM RATINGS ( Tc=25 oC ) DESCRIPTION SYMBOL RATED VALUE Features • Index Guided MQW Structure • Wavelength : 850 nm (Typ.) • Optical Power : 100 mW CW • Threshold Current : 100 mA ( Typ. ) • Package Style : TO-18 (5.6 mmØ) Optical Power (mW) Operation Temperature (oC) Storage Temperature (oC) LD Reverse Voltage (V) PD Reverse Voltage (V) Po Top Tstg VLDR VPDR 100 -10 to +50 -40 to +85 2 30 OPTICAL AND ELECTRICAL CHARACTERISTICS ( Tc=25 oC ) DESCRIPTION SYMBOL Lasing Wavelength (nm) Threshold Current (mA) Operating Current (mA) Operating Voltage (V) Monitor Current (mA) Slope Efficiency (mW/mA) Beam Divergence ⎪⎢ (°) Beam Divergence ⊥ (°) Astigmatism (μm) λp Ith Iop Vop Im η θ⎪⎢ θ⊥ As MIN. 835 70 200 1.8 0.1 0.
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