RU140N10R Datasheet N-Channel Advanced Power MOSFET

Manufacturer: Ruichips

RU140N10R n-channel advanced power mosfet by Ruichips - Datasheet Preview

Datasheet Details

Part number	RU140N10R
Manufacturer	Ruichips
File Size	324.27 KB
Description	N-Channel Advanced Power MOSFET
Download	RU140N10R Download (PDF)

General Description

TO-220 Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG IS Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300µs Pulsed Drain Current Tested ID Continue Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance -Junction to Case Drain-Source Avalanche Ratings ③ EAS Avalanche Energy ,Single Pulsed N-Channel MOSFET TC=25°C TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Rating 100 ±25 175 -55 to 175 ① 140 ② 560 ① 140 ① 100 250 125 0.6 1.1 Unit V °C °C A A W °C/W J Copyright Ruichips Semiconductor Co.

Overview

RU140N10R N-Channel Advanced Power MOSFET.

Key Features

100V/140A RDS (ON)=6.5mΩ(Typ. ) @ VGS=10V.
Ultra Low On-Resistance.
Low Gate Charge.
Fast Switching and Fully Avalanche Rated.
100% avalanche tested.

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