RU1Z200Q - N-Channel Advanced Power MOSFET

Description

G DS TO247 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μ

Features

150V/200A, RDS (ON) =5.5mΩ(Typ. )@VGS=10V.
Ultra Low On-Resistance.
Exceptional dv/dt capability.
Fast Switching and Fully Avalanche Rated.
100% avalanche tested.
175°C Operating Temperature.
Lead Free and Green Devices Available (RoHS Compliant).

Ruichips

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Datasheet Details

Part number	RU1Z200Q
Manufacturer	Ruichips
File Size	398.68 KB
Description	N-Channel Advanced Power MOSFET
Datasheet	RU1Z200Q Datasheet
Additional preview pages of the RU1Z200Q datasheet.

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Full PDF Text Transcription

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RU1Z200Q N-Channel Advanced Power MOSFET Features • 150V/200A, RDS (ON) =5.5mΩ(Typ.

Published: Apr 25, 2016 |