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RU1Z120R Datasheet N-Channel Advanced Power MOSFET

Manufacturer: Ruichips

Overview: RU1Z120R N-Channel Advanced Power MOSFET.

Datasheet Details

Part number RU1Z120R
Manufacturer Ruichips
File Size 467.69 KB
Description N-Channel Advanced Power MOSFET
Download RU1Z120R Download (PDF)

General Description

Applications • High Speed Power Switching • High Efficiency Synchronous in SMPS • Automotive applications and a wide variety of other applications GDS TO220 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μs Pulse Drain Current Tested ID② Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RJC Thermal Resistance-Junction to Case RJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings EAS③ Avalanche Energy, Single Pulsed S N-Channel MOSFET Rating Unit TC=25°C 150 ±25 175 -55 to 175 120 V °C °C A TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 480 A 120 A 85 375 W 188 0.4 °C/W 62.5 °C/W 552 mJ Ruichips Semiconductor Co., Ltd Rev.

A– Feb., 2014 1 www.ruichips.com RU1Z120R Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU1Z120R Min.

Typ.

Key Features

  • 150V/120A, RDS (ON) =11mΩ(Typ. )@VGS=10V.
  • Reliable and Rugged.
  • 100% avalanche tested.
  • 175°C Operating Temperature.
  • Lead Free and Green Devices Available (RoHS Compliant) Pin.