RU2020H Datasheet N-Channel Advanced Power MOSFET

Manufacturer: Ruichips

RU2020H n-channel advanced power mosfet by Ruichips - Datasheet Preview

Datasheet Details

Part number	RU2020H
Manufacturer	Ruichips
File Size	263.44 KB
Description	N-Channel Advanced Power MOSFET
Download	RU2020H Download (PDF)

General Description

SOP-8 Applications • DC/DC Converter Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TA=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested TA=25°C ID PD ② RθJA Continuous Drain Current(VGS=10V) TA=25°C TA=70°C Maximum Power Dissipation TA=25°C TA=70°C Thermal Resistance-Junction to Ambient Rating 20 ±12 150 -55 to 150 4.4 ① 70 20 17 3.1 2 40 Unit V °C °C A A A W °C/W Copyright© Ruichips Semiconductor Co., Ltd Rev.

A– FEB

Overview

RU2020H N-Channel Advanced Power MOSFET MOSFET.

Key Features

20V/20A, RDS (ON) =3.5mΩ (Typ. ) @ VGS=10V RDS (ON) =3.8mΩ (Typ. ) @ VGS=4.5V RDS (ON) =5.6mΩ (Typ. ) @ VGS=2.5V.
Super High Dense Cell Design.
Low RDS(ON).
Reliable and Rugged.
Lead Free and Green Available Pin.

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