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RU20120L - N-Channel Advanced Power MOSFET

Description

Applications Power Management DC-DC Converters TO252 Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Contin

Features

  • 20V/120A, RDS (ON) =2.3mΩ(Typ. )@VGS=10V RDS (ON) =4.2mΩ(Typ. )@VGS=4.5V.
  • Super High Dense Cell Design.
  • Reliable and Rugged.
  • 100% avalanche tested.
  • 175°C Operating Temperature.
  • Lead Free and Green Devices Available (RoHS Compliant) Pin.

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Datasheet preview – RU20120L

Datasheet Details

Part number RU20120L
Manufacturer Ruichips
File Size 284.47 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet RU20120L Datasheet
Additional preview pages of the RU20120L datasheet.

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Full PDF Text Transcription

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RU20120L N-Channel Advanced Power MOSFET Features • 20V/120A, RDS (ON) =2.3mΩ(Typ.)@VGS=10V RDS (ON) =4.2mΩ(Typ.)@VGS=4.
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