RU20120L - N-Channel Advanced Power MOSFET

Product Overview

Ruichips

Datasheet Details

Part number	RU20120L
Manufacturer	Ruichips
File Size	284.47 KB
Description	N-Channel Advanced Power MOSFET
Datasheet	RU20120L Datasheet
Additional preview pages of the RU20120L datasheet.

Product details

Description

Applications Power Management DC-DC Converters TO252 Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Ca

Features

20V/120A, RDS (ON) =2.3mΩ(Typ. )@VGS=10V RDS (ON) =4.2mΩ(Typ. )@VGS=4.5V.
Super High Dense Cell Design.
Reliable and Rugged.
100% avalanche tested.
175°C Operating Temperature.
Lead Free and Green Devices Available (RoHS Compliant) Pin.

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Published: Apr 4, 2016 |