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RU2020H - N-Channel Advanced Power MOSFET

General Description

SOP-8 Applications DC/DC Converter Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous

Key Features

  • 20V/20A, RDS (ON) =3.5mΩ (Typ. ) @ VGS=10V RDS (ON) =3.8mΩ (Typ. ) @ VGS=4.5V RDS (ON) =5.6mΩ (Typ. ) @ VGS=2.5V.
  • Super High Dense Cell Design.
  • Low RDS(ON).
  • Reliable and Rugged.
  • Lead Free and Green Available Pin.

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Datasheet Details

Part number RU2020H
Manufacturer Ruichips
File Size 263.44 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet RU2020H Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RU2020H N-Channel Advanced Power MOSFET MOSFET Features • 20V/20A, RDS (ON) =3.5mΩ (Typ.) @ VGS=10V RDS (ON) =3.8mΩ (Typ.) @ VGS=4.5V RDS (ON) =5.6mΩ (Typ.) @ VGS=2.