RU3030M3 mosfet equivalent, n-channel advanced power mosfet.
Pin Description
* 30V/30A,
RDS (ON) =7mΩ(Typ.)@VGS=10V
RDS (ON) =10mΩ(Typ.)@VGS=4.5V
* Super High Dense Cell Design
* Fast Switching Speed
* Low gate .
* Switching Application Systems
PIN1
yDFN3333 Onl D
DDDD
Use G
Absolute Maximum Ratings
Symbol
times Parameter
.
* 30V/30A,
RDS (ON) =7mΩ(Typ.)@VGS=10V
RDS (ON) =10mΩ(Typ.)@VGS=4.5V
* Super High Dense Cell Design
* Fast Switching Speed
* Low gate Charge
* 100% avalanche tested
S SSG
* Lead Free and Green Devices Available (RoHS Comp.
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