RU3050L Datasheet N-Channel Advanced Power MOSFET

Manufacturer: Ruichips

RU3050L n-channel advanced power mosfet by Ruichips - Datasheet Preview

Datasheet Details

Part number	RU3050L
Manufacturer	Ruichips
File Size	289.99 KB
Description	N-Channel Advanced Power MOSFET
Download	RU3050L Download (PDF)

General Description

TO-252 N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ② EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Copyright© Ruichips Semiconductor Co., Ltd Rev.

A–JUN., 2012 Rating 30 ±20 175

Overview

RU3050L N-Channel Advanced Power MOSFET MOSFET.

Key Features

30V/55A, RDS (ON) =7 mΩ(Typ. )@VGS=10V RDS (ON) =12 mΩ(Typ. )@VGS=4.5V.
Super High Dense Cell Design.
Ultra Low On-Resistance.
100% avalanche tested.
Lead Free and Green Devices Available (RoHS Compliant).

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