RU3070L - N-Channel Advanced Power MOSFET

Description

D G S TO252 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① I

Features

30V/70A, RDS (ON) =3.3mΩ(Typ. )@VGS=10V RDS (ON) =5mΩ(Typ. )@VGS=4.5V.
Super High Dense Cell Design.
Ultra Low On-Resistance.
100% avalanche tested.
Lead Free and Green Devices Available (RoHS Compliant).

Ruichips

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Datasheet Details

Part number	RU3070L
Manufacturer	Ruichips
File Size	313.51 KB
Description	N-Channel Advanced Power MOSFET
Datasheet	RU3070L Datasheet
Additional preview pages of the RU3070L datasheet.

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Full PDF Text Transcription

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RU3070L N-Channel Advanced Power MOSFET Features • 30V/70A, RDS (ON) =3.3mΩ(Typ.)@VGS=10V RDS (ON) =5mΩ(Typ.)@VGS=4.

Published: Apr 4, 2016 |